STD12NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD12NM50N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
380mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
11A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD12
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
940pF @ 50V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
11A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
44A
Dual Supply Voltage
500V
Nominal Vgs
3 V
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$1.84338
$3.68676
STD12NM50N Product Details
STD12NM50N Description
STD12NM50N is a 500v N-channel FDmesh? II Power MOSFET. FDmesh? technology combines the MDmesh? features with an intrinsic fast-recovery body
diode. The STMicroelectronics STD12NM50N has reduced resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.