IPB80N06S3L-05

new-10%

Manufacturer part number:IPB80N06S3L-05

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO-263

Case Package:SOT-23

Datasheet:IPB80N06S3L-05 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	165W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	165W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 69A, 10V
Vgs(th) (Max) @ Id	2.2V @ 115μA
Input Capacitance (Ciss) (Max) @ Vds	13060pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	273nC @ 10V
Rise Time	49ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0077Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	345 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free