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NTF3055L175T1G

  • NTF3055L175T1G - NTF3055L175T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • NTF3055L175T1G - NTF3055L175T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

NTF3055L175T1G

NTF3055L175T1G

ON Semiconductor

NTF3055L175T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTF3055L175T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating ModeENHANCEMENT MODE
Power Dissipation2.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time21ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 15.3 ns
Turn-Off Delay Time 14.3 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 6A
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 65 mJ
Nominal Vgs 1.7 V
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2791 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.551761$0.551761
10$0.520529$5.20529
100$0.491065$49.1065
500$0.463269$231.6345
1000$0.437047$437.047

NTF3055L175T1G Product Details

NTF3055L175T1G Description

NTF3055L175T1G N-channel MOSFET is based on an original, unique vertical structure. NTF3055L175T1G MOSFET results in a dramatic reduction in the on-resistance. ON Semiconductor NTF3055L175T1G is suitable for Power Supplies, Converters, Power Motor Controls, Bridge Circuits.

NTF3055L175T1G Features

Power Motor Controls

Bridge Circuits

Converters

Power Supplies

Pb-Free Packages are Available

NTF3055L175T1G Applications

Power Supplies

Power Motor Controls

Bridge Circuits

Converters


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