NTF3055L175T1G

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NTF3055L175T1G

Manufacturer part number:NTF3055L175T1G

Manufacturer:ON Semiconductor

Description:NTF3055L175T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTF3055L175T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	2A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	175m Ω @ 1A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	15.3 ns
Turn-Off Delay Time	14.3 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	15V
Drain Current-Max (Abs) (ID)	2A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	6A
Dual Supply Voltage	60V
Avalanche Energy Rating (Eas)	65 mJ
Nominal Vgs	1.7 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free