IPC60N04S4L06ATMA1

new-10%

Manufacturer part number:IPC60N04S4L06ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 8TDSON

Case Package:SOT-23

Datasheet:IPC60N04S4L06ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	63W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 30μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Continuous Drain Current (ID)	60A
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0079Ohm
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead