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IPD046N08N5ATMA1

IPD046N08N5ATMA1

IPD046N08N5ATMA1

Infineon Technologies

MOSFET N-CH 80V 90A TO252-3

SOT-23

IPD046N08N5ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.6m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 3.8V @ 65μA
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 40V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.262105 $2.262105
10 $2.134061 $21.34061
100 $2.013265 $201.3265
500 $1.899306 $949.653
1000 $1.791799 $1791.799

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