FDS2170N3

new-10%

Manufacturer part number:FDS2170N3

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 3A 8-SOIC

Case Package:SOT-23

Datasheet:FDS2170N3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SOIC
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	3A
Power Dissipation-Max	3W Ta
Power Dissipation	3W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	128mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1292pF @ 100V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.292nF
Drain to Source Resistance	128mOhm
Rds On Max	128 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free