IPD12CNE8N G

new-10%

Manufacturer part number:IPD12CNE8N G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 85V 67A TO252-3

Case Package:SOT-23

Datasheet:IPD12CNE8N G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	compliant
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.4m Ω @ 67A, 10V
Vgs(th) (Max) @ Id	4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	4340pF @ 40V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Drain to Source Voltage (Vdss)	85V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	67A
Drain-source On Resistance-Max	0.0124Ohm
Pulsed Drain Current-Max (IDM)	268A
DS Breakdown Voltage-Min	85V
Avalanche Energy Rating (Eas)	154 mJ