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IPD350N06LGBUMA1

IPD350N06LGBUMA1

IPD350N06LGBUMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 35m Ω @ 29A, 10V ±20V 800pF @ 30V 13nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD350N06LGBUMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 68W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2V @ 28μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 30V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
IPD350N06LGBUMA1 Product Details

IPD350N06LGBUMA1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 800pF @ 30V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IPD350N06LGBUMA1 Features


a 60V drain to source voltage (Vdss)


IPD350N06LGBUMA1 Applications


There are a lot of Infineon Technologies
IPD350N06LGBUMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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