IPD50N06S4L08ATMA1

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Manufacturer part number:IPD50N06S4L08ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 50A TO252-3

Case Package:SOT-23

Datasheet:IPD50N06S4L08ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	OptiMOS™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	71W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds	4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
RoHS Status	ROHS3 Compliant