IRFR3707ZCTRLP

new-10%

Manufacturer part number:IRFR3707ZCTRLP

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 56A DPAK

Case Package:SOT-23

Datasheet:IRFR3707ZCTRLP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	50W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 15V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	30A
Drain-source On Resistance-Max	0.0095Ohm
Pulsed Drain Current-Max (IDM)	220A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	42 mJ
RoHS Status	RoHS Compliant