IPD50R280CEATMA1

new-10%

Manufacturer part number:IPD50R280CEATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 500V 13A PG-TO252

Case Package:SOT-23

Datasheet:IPD50R280CEATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	CoolMOS™ CE
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	119W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 4.2A, 13V
Vgs(th) (Max) @ Id	3.5V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds	773pF @ 100V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	32.6nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	13V
Vgs (Max)	±20V
Drain-source On Resistance-Max	0.28Ohm
Pulsed Drain Current-Max (IDM)	42.9A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	231 mJ
RoHS Status	ROHS3 Compliant