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IPD50R2K0CEBTMA1

IPD50R2K0CEBTMA1

IPD50R2K0CEBTMA1

Infineon Technologies

MOSFET N-Ch 500V 6.1A DPAK-2

SOT-23

IPD50R2K0CEBTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case TO-252-3
Number of Pins 3
Weight 3.949996g
Packaging Tape & Reel (TR)
Published 2013
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 22W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Turn On Delay Time 6 ns
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 38 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 124pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 2Ohm
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status RoHS Compliant

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