SI5461EDC-T1-E3

new-10%

Manufacturer part number:SI5461EDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 4.5A CHIPFET

Case Package:SOT-23

Datasheet:SI5461EDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	45mOhm
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	2.5 μs
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	45m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	4.5A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	4.5μs
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	4.5 μs
Turn-Off Delay Time	27 μs
Continuous Drain Current (ID)	-6.2A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4.5A
Drain to Source Breakdown Voltage	-20V
Height	1.0922mm
Length	3.0988mm
Width	1.7018mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free