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IPD60R380E6ATMA2

IPD60R380E6ATMA2

IPD60R380E6ATMA2

Infineon Technologies

MOSFET NCH 600V 10.6A TO252

SOT-23

IPD60R380E6ATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2008
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10.6A
Max Dual Supply Voltage 600V
Input Capacitance 700pF
FET Feature Super Junction
Rds On Max 380 mΩ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.640060 $0.64006
10 $0.603830 $6.0383
100 $0.569651 $56.9651
500 $0.537406 $268.703
1000 $0.506987 $506.987

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