IPW60R031CFD7XKSA1

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IPW60R031CFD7XKSA1

Manufacturer part number:IPW60R031CFD7XKSA1

Manufacturer:Infineon Technologies

Description:IPW60R031CFD7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPW60R031CFD7XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Series	CoolMOS™ CFD7
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	278W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	278W
Turn On Delay Time	48 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	31m Ω @ 32.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.63mA
Input Capacitance (Ciss) (Max) @ Vds	5623pF @ 400V
Current - Continuous Drain (Id) @ 25°C	63A Tc
Gate Charge (Qg) (Max) @ Vgs	141nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	175 ns
Continuous Drain Current (ID)	63A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	277A
Avalanche Energy Rating (Eas)	326 mJ
Max Junction Temperature (Tj)	150°C
Height	25.4mm
RoHS Status	ROHS3 Compliant