IPD60R385CPATMA1

new-10%

Manufacturer part number:IPD60R385CPATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 9A TO-252

Case Package:SOT-23

Datasheet:IPD60R385CPATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	PG-TO252-3
Weight	3.949996g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ CP
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	9A
Number of Channels	1
Power Dissipation-Max	83W Tc
Power Dissipation	83W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain to Source Breakdown Voltage	600V
Input Capacitance	790pF
Drain to Source Resistance	350mOhm
Rds On Max	385 mΩ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free