IPD60R800CEATMA1

new-10%

Manufacturer part number:IPD60R800CEATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 600V 5.6A DPAK-2

Case Package:SOT-23

Datasheet:IPD60R800CEATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	CoolMOS™ CE
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 170μA
Input Capacitance (Ciss) (Max) @ Vds	373pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5.6A Tc
Gate Charge (Qg) (Max) @ Vgs	17.2nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	5.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	72 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free