IPD65R600C6ATMA1

new-10%

Manufacturer part number:IPD65R600C6ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET LOW POWER_LEGACY

Case Package:SOT-23

Datasheet:IPD65R600C6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-G2
Operating Temperature (Min)	-55°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-252
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	142 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant