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IPD65R600C6ATMA1

IPD65R600C6ATMA1

IPD65R600C6ATMA1

Infineon Technologies

MOSFET LOW POWER_LEGACY

SOT-23

IPD65R600C6ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal FormGULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 142 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS StatusRoHS Compliant
In-Stock:1280 items

About IPD65R600C6ATMA1

The IPD65R600C6ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET LOW POWER_LEGACY.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD65R600C6ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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