IPD65R600E6ATMA1

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IPD65R600E6ATMA1

Manufacturer part number:IPD65R600E6ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 7.3A TO252-3

Case Package:SOT-23

Datasheet:IPD65R600E6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ E6
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	63W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	7.3A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	700V
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	142 mJ
Height	2.41mm
Length	6.73mm
Width	6.22mm
RoHS Status	ROHS3 Compliant