IPD65R660CFDAATMA1

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Manufacturer part number:IPD65R660CFDAATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R

Case Package:SOT-23

Datasheet:IPD65R660CFDAATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	62.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	660m Ω @ 3.22A, 10V
Vgs(th) (Max) @ Id	4.5V @ 214.55μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	543pF @ 100V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.66Ohm
Pulsed Drain Current-Max (IDM)	17A
Avalanche Energy Rating (Eas)	115 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead