NTTFS4823NTAG

new-10%

Manufacturer part number:NTTFS4823NTAG

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 30V 17.5A 8-Pin WDFN T/R

Case Package:SOT-23

Datasheet:NTTFS4823NTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 20 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	8
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	660mW Ta 32.9W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1013pF @ 12V
Current - Continuous Drain (Id) @ 25°C	7.1A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	17.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	12.6A
Drain-source On Resistance-Max	0.0175Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	150A
Avalanche Energy Rating (Eas)	31 mJ
Nominal Vgs	1.9 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free