IPD80R1K2P7ATMA1 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 10 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 300pF @ 500V.Peak drain current for this device is 11A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 800V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IPD80R1K2P7ATMA1 Features

the avalanche energy rating (Eas) is 10 mJ
based on its rated peak drain current 11A.
a 800V drain to source voltage (Vdss)

IPD80R1K2P7ATMA1 Applications

There are a lot of Infineon Technologies
IPD80R1K2P7ATMA1 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification