IPD80R2K7C3AATMA1

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Manufacturer part number:IPD80R2K7C3AATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO252-3

Case Package:SOT-23

Datasheet:IPD80R2K7C3AATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Operating Temperature (Min)	-40°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-252
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	2.7Ohm
Pulsed Drain Current-Max (IDM)	6A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	90 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant