NDT014L

new-10%

Manufacturer part number:NDT014L

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 160m Ω @ 3.4A, 10V ±20V 214pF @ 30V 5nC @ 4.5V TO-261-4, TO-261AA

Case Package:SOT-23

Datasheet:NDT014L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	188mg
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	160mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	2.8A
Number of Elements	1
Power Dissipation-Max	3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	214pF @ 30V
Current - Continuous Drain (Id) @ 25°C	2.8A Ta
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	2.8A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2.7A
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Nominal Vgs	1.5 V
Height	1.7mm
Length	6.7mm
Width	3.7mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free