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IPD90N06S4L03ATMA2

IPD90N06S4L03ATMA2

IPD90N06S4L03ATMA2

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

SOT-23

IPD90N06S4L03ATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.87719 $1.75438

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