IPD95R750P7ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPD95R750P7ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2018
Series
CoolMOS™ P7
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
73W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
750m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 220μA
Input Capacitance (Ciss) (Max) @ Vds
712pF @ 400V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Drain to Source Voltage (Vdss)
950V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IPD95R750P7ATMA1 Product Details
IPD95R750P7ATMA1 Description
IPD95R750P7ATMA1 is a 950V CoolMOSTM P7 SJ Power Device. The IPD95R750P7ATMA1 sets a new benchmark in 950V super-junction technologies and combines best-in-class performance with state-of-the-art ease-of-use, resulting from Infineon’s over 18 years
of pioneering super junction technology innovation. The IPD95R750P7ATMA1 is recommended for flyback topologies for LED Lighting, low power Chargers and Adapters, Smart Meter, AUX power and Industrial power and also suitable for PFC stage in Consumer and Solar applications.
IPD95R750P7ATMA1 Features
Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)