IXTA56N15T

new-10%

Manufacturer part number:IXTA56N15T

Manufacturer:IXYS

Description:MOSFET N-CH 150V 56A TO-263

Case Package:SOT-23

Datasheet:IXTA56N15T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	TrenchHV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	PURE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	56A
Pulsed Drain Current-Max (IDM)	140A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	ROHS3 Compliant