IPI023NE7N3 G

new-10%

Manufacturer part number:IPI023NE7N3 G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 120A TO262-3

Case Package:SOT-23

Datasheet:IPI023NE7N3 G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	OptiMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 273μA
Input Capacitance (Ciss) (Max) @ Vds	14400pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Drain to Source Voltage (Vdss)	75V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.0023Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	1100 mJ
RoHS Status	RoHS Compliant