IXFN48N60P

new-10%

Manufacturer part number:IXFN48N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 40A SOT-227

Case Package:SOT-23

Datasheet:IXFN48N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	48A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Case Connection	ISOLATED
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	110A
Avalanche Energy Rating (Eas)	2000 mJ
Height	9.6mm
Length	38.23mm
Width	25.42mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free