IPI028N08N3GHKSA1

new-10%

Manufacturer part number:IPI028N08N3GHKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI028N08N3GHKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	14200pF @ 40V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	100A
Drain-source On Resistance-Max	0.0028Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	80V
RoHS Status	RoHS Compliant