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IPI030N10N3GHKSA1

IPI030N10N3GHKSA1

IPI030N10N3GHKSA1

Infineon Technologies

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262

SOT-23

IPI030N10N3GHKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package PG-TO262-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Turn On Delay Time 34 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275μA
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 84 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 14.8nF
Rds On Max 3 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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