IPI076N12N3GAKSA1

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Manufacturer part number:IPI076N12N3GAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 120V 100A TO262-3

Case Package:SOT-23

Datasheet:IPI076N12N3GAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	188W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	188W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 130μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6640pF @ 60V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	101nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Drain-source On Resistance-Max	0.0076Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead