NTR5105PT1G

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Manufacturer part number:NTR5105PT1G

Manufacturer:ON Semiconductor

Description:NTR5105PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTR5105PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	347mW Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5.8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C	196mA Ta
Gate Charge (Qg) (Max) @ Vgs	1nC @ 5V
Rise Time	4ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12.8 ns
Turn-Off Delay Time	8.8 ns
Continuous Drain Current (ID)	196mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free