IPI084N06L3GXKSA1

new-10%

Manufacturer part number:IPI084N06L3GXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-Ch 60V 50A I2PAK-3

Case Package:SOT-23

Datasheet:IPI084N06L3GXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 34μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 30V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0084Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	200A
Height	9.45mm
Length	10.36mm
Width	4.52mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free