IXTP02N50D

new-10%

Manufacturer part number:IXTP02N50D

Manufacturer:IXYS

Description:MOSFET N-CH 500V 0.2A TO-220

Case Package:SOT-23

Datasheet:IXTP02N50D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.1W Ta 25W Tc
Element Configuration	Single
Power Dissipation	25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30 Ω @ 50mA, 0V
Vgs(th) (Max) @ Id	5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Tc
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	200mA
JEDEC-95 Code	TO-220AD
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.2A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	0.8A
FET Feature	Depletion Mode
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free