IPI120N06S4H1AKSA2

new-10%

Manufacturer part number:IPI120N06S4H1AKSA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO262-3

Case Package:SOT-23

Datasheet:IPI120N06S4H1AKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	21900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	120A
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0024Ohm
Pulsed Drain Current-Max (IDM)	480A
RoHS Status	RoHS Compliant