IPP80R750P7XKSA1 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 16 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 460pF @ 500V maximal input capacitance.As far as peak drain current is concerned, its maximum pulsed current is 17A.The DS breakdown voltage should be maintained above 800V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPP80R750P7XKSA1 Features

the avalanche energy rating (Eas) is 16 mJ
based on its rated peak drain current 17A.
a 800V drain to source voltage (Vdss)

IPP80R750P7XKSA1 Applications

There are a lot of Infineon Technologies
IPP80R750P7XKSA1 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies