IPI65R280E6XKSA1

new-10%

Manufacturer part number:IPI65R280E6XKSA1

Manufacturer:Infineon Technologies

Description:Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3

Case Package:SOT-23

Datasheet:IPI65R280E6XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ E6
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 440μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 100V
Current - Continuous Drain (Id) @ 25°C	13.8A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	76 ns
Continuous Drain Current (ID)	13.8A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.28Ohm
Drain to Source Breakdown Voltage	700V
Avalanche Energy Rating (Eas)	290 mJ
Height	9.45mm
Length	10.36mm
Width	4.52mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free