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APT5018BLLG

APT5018BLLG

APT5018BLLG

Microsemi Corporation

MOSFET N-CH 500V 27A TO-247

SOT-23

APT5018BLLG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 7®
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 27A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2596pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 27A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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