IPI80N04S204AKSA1

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Manufacturer part number:IPI80N04S204AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 80A TO262-3

Case Package:SOT-23

Datasheet:IPI80N04S204AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	OptiMOS™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	26 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	810 mJ
Height	9.25mm
Length	10mm
Width	4.4mm
RoHS Status	ROHS3 Compliant