SIB413DK-T1-GE3

new-10%

Manufacturer part number:SIB413DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 9A SC75-6

Case Package:SOT-23

Datasheet:SIB413DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Supplier Device Package	PowerPAK® SC-75-6L Single
Weight	95.991485mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	75mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	2.4W Ta 13W Tc
Power Dissipation	2.4W
Turn On Delay Time	20.5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	75mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	357pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	7.63nC @ 5V
Rise Time	46ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	-9A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	20V
Input Capacitance	357pF
Drain to Source Resistance	119mOhm
Rds On Max	75 mΩ
Nominal Vgs	-1.5 V
Height	750μm
Length	1.6mm
Width	1.6mm
RoHS Status	ROHS3 Compliant