IPI80N04S3H4AKSA1

new-10%

Manufacturer part number:IPI80N04S3H4AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 80A TO262-3

Case Package:SOT-23

Datasheet:IPI80N04S3H4AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	115W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 65μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	80A
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0048Ohm
RoHS Status	RoHS Compliant