IRFBF30SPBF

new-10%

Manufacturer part number:IRFBF30SPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 900V 3.6A D2PAK

Case Package:SOT-23

Datasheet:IRFBF30SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.7 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.6A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	900V
Avalanche Energy Rating (Eas)	250 mJ
Height	4.83mm
Length	10.41mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant