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IPI80P04P4L06AKSA1

IPI80P04P4L06AKSA1

IPI80P04P4L06AKSA1

Infineon Technologies

Trans MOSFET P-CH 40V 80A 3-Pin(3+Tab) TO-262

SOT-23

IPI80P04P4L06AKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series Automotive, AEC-Q101, OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6580pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0067Ohm
RoHS Status RoHS Compliant
Lead Free Contains Lead

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