NVD20N03L27T4G

new-10%

Manufacturer part number:NVD20N03L27T4G

Manufacturer:ON Semiconductor

Description:MOSFET NFET DPAK 30V 20A 0.027R

Case Package:SOT-23

Datasheet:NVD20N03L27T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW ON-RESISTANCE
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.75W Ta 74W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 10A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	18.9nC @ 10V
Rise Time	137ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	288 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free