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IPL60R185P7AUMA1

IPL60R185P7AUMA1

IPL60R185P7AUMA1

Infineon Technologies

MOSFET N-CH 650V 19A VSON-4

SOT-23

IPL60R185P7AUMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Supplier Device Package PG-VSON-4
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series CoolMOS™ P7
Part Status Active
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 81W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 185mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 400V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain to Source Resistance 149mOhm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.47000 $4.41
6,000 $1.41556 $8.49336

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