RV1C002UNT2CL

new-10%

Manufacturer part number:RV1C002UNT2CL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 20V 0.15A VML0806

Case Package:SOT-23

Datasheet:RV1C002UNT2CL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100mW
Case Connection	DRAIN
Turn On Delay Time	3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 150mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	12pF @ 10V
Current - Continuous Drain (Id) @ 25°C	150mA Ta
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	150mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.15A
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free