IPLU300N04S4R8XTMA1

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IPLU300N04S4R8XTMA1

Manufacturer part number:IPLU300N04S4R8XTMA1

Manufacturer:Infineon Technologies

Description:IPLU300N04S4R8XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPLU300N04S4R8XTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Number of Pins	8
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-HSOF-8
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
JESD-30 Code	R-MBCC-F2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	429W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	429W
Case Connection	DRAIN
Turn On Delay Time	50 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.77m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 230μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	22945pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300A Tc
Gate Charge (Qg) (Max) @ Vgs	287nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	61 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	300A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.00077Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	290 mJ
Max Junction Temperature (Tj)	175°C
Feedback Cap-Max (Crss)	300 pF
Height	2.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free