IPP06N03LA

new-10%

Manufacturer part number:IPP06N03LA

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 50A TO-220AB

Case Package:SOT-23

Datasheet:IPP06N03LA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Current Rating	50A
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds	2653pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0099Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	225 mJ
RoHS Status	RoHS Compliant