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VP0808B-2

VP0808B-2

VP0808B-2

Vishay Siliconix

Trans MOSFET P-CH 80V 0.88A 3-Pin TO-205AD

SOT-23

VP0808B-2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6.25W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 880mA Ta
Rise Time 30ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 880mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.88A
Drain-source On Resistance-Max 5Ohm
Pulsed Drain Current-Max (IDM) 3A
DS Breakdown Voltage-Min 80V
Feedback Cap-Max (Crss) 25 pF
Turn Off Time-Max (toff) 60ns
Turn On Time-Max (ton) 55ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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